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RHP020N06
Data Sheet
0.6
1000
9
0.5
0.4
I D = 2.0A
Ta=25°C
Pulsed
100
t d (off)
t f
Ta=25°C
V DD = 30V
V GS =10V
R G =10 ?
Pulsed
8
7
6
5
0.3
4
Ta=25°C
0.2
10
3
2
V DD = 30V
I D = 2.0A
0.1
I D = 1.0A
t d (on)
t r
1
R G =10 ?
Pulsed
0
1
0
0
5
10
15
0.01
0.1
1
10
0
1
2
3
4
5
6
GATE-SOURCE VOLTAGE : V GS [V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : I D [A]
Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
1000
Ciss
100
10
1
Operation in this area is limited by R DS(ON)
(V GS = 10V)
100us
1ms
P W = 10ms
100
Ta=25°C
f=1MHz
Crss
Coss
0.1
0.01
DC operation
Ta = 25°C
10
V GS =0V
0.001
Single Pulse
MOUNTED ON SERAMIC BOARD
0.01
0.1
1
10
100
0.1
1
10
100
10
1
0.1
DRAIN-SOURCE VOLTAGE : V DS [V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Ta = 25°C
Single Pulse
DRAIN-SOURCE VOLTAGE : V DS [V]
Fig.14 Maximum Safe Operating Aera
0.01
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5 °C/W
<Mounted on a SERAMIC board>
0.001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth
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4/4
2009.03 - Rev.A
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